Why It Matters – “Most importantly, the plasmonic-electrical concept will open up a new way to manipulate both optical and electrical properties of semiconductor devices simultaneously.”
” … Understanding the SCL (space charge limit) effect is important to manipulate transport, recombination, and extraction of photocarriers, which will significantly affect the power conversion efficiency (PCE) of OSCs. (Organic Solar Cells)”
As a fundamental electrostatic limit, space charge limit (SCL) for photocurrent is a universal phenomenon and of paramount importance for organic semiconductors with unbalanced photocarriers mobility and high exciton generation. Here we proposed a new plasmonic-electrical concept to manipulate electrical properties of organic devices including photocarriers recombination, transport and collection.
As a proof-of-concept, organic solar cells (OSCs) comprising metallic planar and grating electrodes are systematically investigated with normal and inverted device structures. Interestingly, although strong plasmonic resonances induce abnormally dense photocarriers around a grating anode, the grating-inverted OSC is exempt from space charge accumulation (limit) and degradation of electrical properties in contrast to the planar-inverted and planar-normal ones.
The particular reason is that plasmonically induced photocarriers redistribution shortens the transport path of low-mobility holes, which are collected by the grating anode. The work demonstrated and explained the SCL breaking with the plasmonic-electrical effect. Most importantly, the plasmonic-electrical concept will open up a new way to manipulate both optical and electrical properties of semiconductor devices simultaneously.
This work is supported by the General Research Fund (grants: HKU711813 and HKU711612E), the National Natural Science Foundation of China (NSFC)/Research Grants Council (RGC) grant (N_HKU709/12) and Ministry of Education (MOE)/Research Grants Council (RGC) (M-HKU703/12) from RGC of Hong Kong Special Administrative Region, China. This project is also supported in part by Collaborated Research Fund (CUHK1/CRF/12G) of RGC, NSFC grant (No. 61201122), and UGC of Hong Kong (No. AoE/P-04/08).
Abstract ** The complete referenced article is available here online at:
The space charge limit (SCL) effect is a universal phenomenon in semiconductor devices involving light emitting diodes, solar cells, and photodetectors1, 2, 3, 4, 5, 6, 7, 8, 9. It also sets a fundamental electrostatic limit in electrical properties of organic semiconductor devices with unbalanced photocarriers (electrons and holes) mobility and high exciton generation efficiency10, 11, 12, 13, 14. With the interesting features of low cost, low-temperature fabrication, semi-transparency, and mechanical flexibility, organic solar cell (OSC) is currently one of emerging optoelectronic devices and shows a bright outlook for green energy industry12, 13, 15, 16, 17, 18. Understanding the SCL effect is important to manipulate transport, recombination, and extraction of photocarriers, which will significantly affect the power conversion efficiency (PCE) of OSCs.
Typically, the occurrence of SCL4 satisfies the following conditions: (1) unbalanced hole and electron mobility; (2) thick active layer; (3) high light intensity or dense photocarriers (electrons and holes) generation; and (4) moderate reverse bias. Compared to electron mobility, a low mobility of holes typically occurs in organic semiconductor devices depending on fabrication procedures19, 20, 21, 22 e.g. thermal annealing, solvent annealing, etc; and even occurs in the OSCs with robust active materials such as the polymer blend of poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM). To investigate SCL characteristics, the inverted OSC with a planar multilayered structure is taken as a representative example. In the planar-inverted OSCs, photocarriers will be generated at the region close to the transparent cathode, such as indium tin oxide (ITO), where incident light will first penetrate. The photogenerated holes with a low mobility will have to transport through the whole active layer, and finally reach the anode (see Figure 1(a)). SCL will occur if the length of active layer is longer than the mean drift length of holes, which is very short because of the low mobility. Meanwhile, holes pile up inside the device to a greater degree than electrons. In other words, positive space charges are accumulated due to the unbalanced photocarriers mobility and a long transport path of holes. As a result, the short-circuit current and fill factor of OSCs will drop significantly due to both the bulk recombination and space charge formation4, 7, 9, 23, 24. In this work, we will demonstrate the SCL breaking in the OSCs incorporating metallic (Ag or Au) nanostructures, which offers a novel route to eliminate the SCL effect in semiconductor devices.
(For the complete article see this link)
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